Projection Printing

Projection printing is the third technique used in optical lithography. It also involves no contact between the mask and the wafer. In fact, this technique employs a large gap between the mask and the wafer, such that Fresnel diffraction is no longer involved. Instead, far-field diffraction is in effect under this technique, which is also known as Fraunhofer diffraction.

Projection printing is the technique employed by most modern optical lithography equipment. Projection printers use a well-designed objective lens between the mask and the wafer, which collects diffracted light from the mask and projects it onto the wafer. The capability of a lens to collect diffracted light and project this onto the wafer is measured by its numerical aperture (NA). The NA values of lenses used in projection printers typically range from 0.16 to 0.40.

The resolution achieved by projection printers depends on the wavelength and coherence of the incident light and the NA of the lens. The resolution achievable by a lens is governed by Rayleigh's criterion, which defines the minimum distance between two images for them to be resolvable. Thus, for any given value of NA, there exists a minimum resolvable dimension.

Using a lens with a higher NA will result in better resolution of the image, but this advantage has a price. The depth of focus of a lens is inversely proportional to the square of the NA, so improving the resolution by increasing the NA reduces the depth of focus of the system. Poor depth of focus will cause some points of the wafer to be out of focus, since no wafer surface is perfectly flat. Thus, proper design of any aligner used in projection printing considers the compromise between resolution and depth of focus.

Proximity Printing

Proximity printing is another optical lithography technique. As its name implies, it involves no contact between the mask and the wafer, which is why masks used with this technique have longer useful lives than those used in contact printing. During proximity printing, the mask is usually only 20-50 microns away from the wafer.

The resolution achieved by proximity printing is not as good as that of contact printing. This is due to the diffraction of light caused by its passing through slits that make up the pattern in the mask, and traversal across the gap between the mask and the wafer.

This type of diffraction is known as Fresnel diffraction, or near-field diffraction, since it results from a small gap between the mask and the wafer. Proximity printing resolution may be improved by diminishing the gap between the mask and the wafer and by using light of shorter wavelengths.

Contact Printing in Photolithography

In contact type photolithographic masking processes for fabricating planar structures, a photoresist is applied to a wafer and a mask is placed over the photoresist. Illumination through the mask, which has a pattern of opaque areas, produces a photochemical reaction in the photoresist which upon developing creates a duplicate of the mask pattern. However, the photoresist is conventionally applied by a spinning process and the rotation produces a build-up of the photoresist around the edges of the wafer. This build-up prevents the pattern portion of the mask from making good physical contact with the photoresist with a resultant decrease in reproducibility and accuracy of the fabricated pattern. A modified mask is formed with a channel corresponding to the peripheral build-up. The channel accepts the build-up so that good contact may be maintained between the photoresist and the patterned portion of the mask.

Photolithpgraphy

Photolithography

Photolithography is the process of transferring geometric shapes on a mask to the surface of a silicon wafer. The steps involved in the photolithographic process are wafer cleaning; barrier layer formation; photoresist application; soft baking; mask alignment; exposure and development; and hard-baking.

Wafer Cleaning, Barrier Formation and Photoresist Application

In the first step, the wafers are chemically cleaned to remove particulate matter on the surface as well as any traces of organic, ionic, and metallic impurities. After cleaning, silicon dioxide, which serves as a barrier layer, is deposited on the surface of the wafer. After the formation of the SiO2 layer, photoresist is applied to the surface of the wafer. High-speed centrifugal whirling of silicon wafers is the standard method for applying photoresist coatings in IC manufacturing. This technique, known as "Spin Coating," produces a thin uniform layer of photoresist on the wafer surface.

Positive and Negative Photoresist

There are two types of photoresist: positive and negative. For positive resists, the resist is exposed with UV light wherever the underlying material is to be removed. In these resists, exposure to the UV light changes the chemical structure of the resist so that it becomes more soluble in the developer. The exposed resist is then washed away by the developer solution, leaving windows of the bare underlying material. In other words, "whatever shows, goes." The mask, therefore, contains an exact copy of the pattern which is to remain on the wafer.

Negative resists behave in just the opposite manner. Exposure to the UV light causes the negative resist to become polymerized, and more difficult to dissolve. Therefore, the negative resist remains on the surface wherever it is exposed, and the developer solution removes only the unexposed portions. Masks used for negative photoresists, therefore, contain the inverse (or photographic "negative") of the pattern to be transferred. The figure below shows the pattern differences generated from the use of positive and negative resist.

Negative resists were popular in the early history of integrated circuit processing, but positive resist gradually became more widely used since they offer better process controllability for small geometry features. Positive resists are now the dominant type of resist used in VLSI fabrication processes.

Soft-Baking

Soft-baking is the step during which almost all of the solvents are removed from the photoresist coating. Soft-baking plays a very critical role in photo-imaging. The photoresist coatings become photosensitive, or imageable, only after softbaking. Oversoft-baking will degrade the photosensitivity of resists by either reducing the developer solubility or actually destroying a portion of the sensitizer. Undersoft-baking will prevent light from reaching the sensitizer. Positive resists are incompletely exposed if considerable solvent remains in the coating. This undersoft-baked positive resists is then readily attacked by the developer in both exposed and unexposed areas, causing less etching resistance.

Mask Alignment and Exposure

One of the most important steps in the photolithography process is mask alignment. A mask or "photomask" is a square glass plate with a patterned emulsion of metal film on one side. The mask is aligned with the wafer, so that the pattern can be transferred onto the wafer surface. Each mask after the first one must be aligned to the previous pattern.

Once the mask has been accurately aligned with the pattern on the wafer's surface, the photoresist is exposed through the pattern on the mask with a high intensity ultraviolet light. There are three primary exposure methods: contact, proximity, and projection. They are shown in the figure below.

Contact Printing

In contact printing, the resist-coated silicon wafer is brought into physical contact with the glass photomask. The wafer is held on a vacuum chuck, and the whole assembly rises until the wafer and mask contact each other. The photoresist is exposed with UV light while the wafer is in contact position with the mask. Because of the contact between the resist and mask, very high resolution is possible in contact printing (e.g. 1-micron features in 0.5 microns of positive resist). The problem with contact printing is that debris, trapped between the resist and the mask, can damage the mask and cause defects in the pattern.

Proximity Printing

The proximity exposure method is similar to contact printing except that a small gap, 10 to 25 microns wide, is maintained between the wafer and the mask during exposure. This gap minimizes (but may not eliminate) mask damage. Approximately 2- to 4-micron resolution is possible with proximity printing.

Projection Printing

Projection printing, avoids mask damage entirely. An image of the patterns on the mask is projected onto the resist-coated wafer, which is many centimeters away. In order to achieve high resolution, only a small portion of the mask is imaged. This small image field is scanned or stepped over the surface of the wafer. Projection printers that step the mask image over the wafer surface are called step-and-repeat systems. Step-and-repeat projection printers are capable of approximately 1-micron resolution.

Development

One of the last steps in the photolithographic process is development. The figure below shows response curves for negative and positive resist after exposure and development.

At low-exposure energies, the negative resist remains completely soluble in the developer solution. As the exposure is increased above a threshold energy Et, more of the resist film remains after development. At exposures two or three times the threshold energy, very little of the resist film is dissolved. For positive resists, the resist solubility in its developer is finite even at zero-exposure energy. The solubility gradually increases until, at some threshold, it becomes completely soluble. These curves are affected by all the resist processing variables: initial resist thickness, prebake conditions, developer chemistry, developing time, and others.

Hard-Baking

Hard-baking is the final step in the photolithographic process. This step is necessary in order to harden the photoresist and improve adhesion of the photoresist to the wafer surface.